Technical parameters/frequency: | 250 MHz |
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Technical parameters/rated power: | 0.5 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 5A |
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Technical parameters/minimum current amplification factor (hFE): | 200 @500mA, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 500 |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/DC current gain (hFE): | 200 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-89-3 |
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Dimensions/Packaging: | SOT-89-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | PB free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SCR533PT100
|
ROHM Semiconductor | 功能相似 | MPT-3 |
NPN 50V 3.0A中功率晶体管 NPN 3.0A 50V Middle Power Transistor
|
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