Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-72 |
|
Dimensions/Packaging: | TO-72 |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
InterFET | 完全替代 | TO-72-3 |
技术参数 TECHNICAL DATA
|
||
2N3821
|
Intersil | 完全替代 | TO-72 |
技术参数 TECHNICAL DATA
|
||
|
|
Motorola | 功能相似 | TO-72 |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
||
|
JAN2N3821
|
Microsemi | 功能相似 | BCY |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
||
|
|
Microsemi | 完全替代 | TO-72 |
Trans JFET N-CH 50V 3Pin TO-72
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review