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Model 293D686X96R3C2TE3
Description 293D 系列 68 uF ±10 % 6.3 V 表面贴装 标准 模压 钽电容
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Brand: Vishay Semiconductor
Packaging 2312
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Packaging method
Standard packaging quantity 1
0.94  yuan 0.94yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2688) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

6.30 V

 

Technical parameters/capacitance:

68 µF

 

Technical parameters/Equivalent series resistance (ESR):

800 mΩ

 

Technical parameters/tolerances:

±10 %

 

Technical parameters/Q value:

6.0

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/rated voltage:

6.3 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation (metric):

6032

 

Encapsulation parameters/Encapsulation:

2312

 

Dimensions/Length:

6 mm

 

Dimensions/Width:

3.2 mm

 

Dimensions/Height:

2.5 mm

 

Dimensions/Packaging (Metric):

6032

 

Dimensions/Packaging:

2312

 

Physical parameters/medium materials:

Tantalum

 

Physical parameters/operating temperature:

-55℃ ~ 125℃

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
293D686X06R3C2TE3 293D686X06R3C2TE3 VISHAY 类似代替 2312
Cap Tant Solid 68uF 6.3V C CASE 20% (6 X 3.2 X 2.5mm) SMD 6032-28 T/R
293D686X06R3C2TE3 293D686X06R3C2TE3 Vishay Semiconductor 类似代替 6032
Cap Tant Solid 68uF 6.3V C CASE 20% (6 X 3.2 X 2.5mm) SMD 6032-28 T/R
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