Technical parameters/rated voltage (DC): | 0.00 V |
|
Technical parameters/capacitance: | 33.0 µF |
|
Technical parameters/Equivalent series resistance (ESR): | 2 Ω |
|
Technical parameters/tolerances: | ±10 % |
|
Technical parameters/rated voltage: | 4 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | 3528 |
|
Dimensions/Packaging: | 3528 |
|
Physical parameters/medium materials: | Tantalum |
|
Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
293D336X0004B2TE3
|
VISHAY | 类似代替 | 3528 |
Cap Tant Solid 33uF 4V B CASE 20% (3.5 X 2.8 X 1.9mm) SMD 3528-21 2Ω 125℃ T/R
|
||
293D336X0004B2TE3
|
Vishay Sprague | 类似代替 | 3528 |
Cap Tant Solid 33uF 4V B CASE 20% (3.5 X 2.8 X 1.9mm) SMD 3528-21 2Ω 125℃ T/R
|
||
293D336X0004B2TE3
|
Vishay Semiconductor | 类似代替 | 3528 |
Cap Tant Solid 33uF 4V B CASE 20% (3.5 X 2.8 X 1.9mm) SMD 3528-21 2Ω 125℃ T/R
|
||
293D336X5004B2TE3
|
Vishay Semiconductor | 类似代替 | 3528 |
Cap Tant 33uF 4V 5% 1411
|
||
293D336X9010B2TE3
|
VISHAY | 功能相似 | 3528 |
VISHAY 293D336X9010B2TE3 钽电容, 33uF 10%容差 10V
|
||
293D336X9010B2TE3
|
Vishay Intertechnology | 功能相似 |
VISHAY 293D336X9010B2TE3 钽电容, 33uF 10%容差 10V
|
|||
293D336X96R3B2TE3
|
Vishay Semiconductor | 类似代替 | 1411 |
CAP TANT 33uF 6.3V 10% 1411
|
||
293D336X96R3B2TE3
|
Vishay Sprague | 类似代替 | 3528 |
CAP TANT 33uF 6.3V 10% 1411
|
||
293D336X96R3B2TE3
|
Vishay Dale | 类似代替 |
CAP TANT 33uF 6.3V 10% 1411
|
|||
293D336X96R3B2TE3
|
VISHAY | 类似代替 | 3528 |
CAP TANT 33uF 6.3V 10% 1411
|
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