Technical parameters/rated voltage (DC): | 300 kV |
|
Technical parameters/capacitance: | 1 µF |
|
Technical parameters/Equivalent series resistance (ESR): | 5 Ω |
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Technical parameters/tolerances: | ±5 % |
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Technical parameters/rated voltage: | 35 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | 3528 |
|
Dimensions/Packaging: | 3528 |
|
Physical parameters/medium materials: | Tantalum |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
293D105X0025B2TE3
|
Vishay Semiconductor | 功能相似 | 1411 |
VISHAY 293D105X0025B2TE3 钽电容, 1uF 20%容差 25V
|
||
293D105X0025B2TE3
|
VISHAY | 功能相似 | 3528 |
VISHAY 293D105X0025B2TE3 钽电容, 1uF 20%容差 25V
|
||
293D105X0035B2TE3
|
Vishay Semiconductor | 类似代替 | 1411 |
VISHAY 293D105X0035B2TE3 钽电容, 1UF, 35V, 5Ω, 0.2, 3528-21, 整卷
|
||
293D105X0035B2TE3
|
VISHAY | 类似代替 | 3528 |
VISHAY 293D105X0035B2TE3 钽电容, 1UF, 35V, 5Ω, 0.2, 3528-21, 整卷
|
||
293D105X0035B2TE3
|
Vishay Sprague | 类似代替 | 3528 |
VISHAY 293D105X0035B2TE3 钽电容, 1UF, 35V, 5Ω, 0.2, 3528-21, 整卷
|
||
293D105X9035B2TE3
|
Vishay Semiconductor | 类似代替 | 1411 |
VISHAY 293D105X9035B2TE3 钽电容, 1uF, 35V, 5Ω, 0.1, 3528-21, 整卷
|
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