Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | PNP, P-Channel |
|
Technical parameters/dissipated power: | 150 W |
|
Technical parameters/breakdown voltage (collector emitter): | 200 V |
|
Technical parameters/Maximum allowable collector current: | 15A |
|
Technical parameters/DC current gain (hFE): | 160 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247 |
|
Dimensions/Packaging: | TO-247 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 85412900951 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Inchange Semiconductor | 功能相似 |
TO-3P PNP 180V 15A
|
|||
2SA1492
|
Quanzhou Jinmei Electronic | 功能相似 |
TO-3P PNP 180V 15A
|
|||
2SA1492
|
Wing Shing International Group | 功能相似 |
TO-3P PNP 180V 15A
|
|||
2SB1429
|
Toshiba | 功能相似 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review