Technical parameters/Maximum reverse voltage (Vrrm): | 28V |
|
Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 31.1 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DO-214AA |
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Dimensions/Packaging: | DO-214AA |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | General |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1SMB28CAT3G
|
Littelfuse | 类似代替 | DO-214AA |
600W 齐纳 SMT 瞬态电压抑制器,1SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
||
1SMB28CAT3G
|
ON Semiconductor | 类似代替 | SMB |
600W 齐纳 SMT 瞬态电压抑制器,1SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
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