Technical parameters/capacitance: | 0.8 pF |
|
Technical parameters/forward voltage: | 0.6 V |
|
Technical parameters/dissipated power: | - |
|
Technical parameters/forward current: | 30 mA |
|
Technical parameters/forward voltage (Max): | 600 mV |
|
Technical parameters/forward current (Max): | 30 mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | SOD-323 |
|
Dimensions/Packaging: | SOD-323 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | SOD-323 |
4 V 30 mA低镉肖特基势垒二极管 4 V, 30 mA low Cd Schottky barrier diode
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||
1PS76SB17
|
Kexin | 功能相似 |
4 V 30 mA低镉肖特基势垒二极管 4 V, 30 mA low Cd Schottky barrier diode
|
|||
1PS76SB17
|
Nexperia | 功能相似 |
4 V 30 mA低镉肖特基势垒二极管 4 V, 30 mA low Cd Schottky barrier diode
|
|||
1PS76SB17
|
Philips | 功能相似 | SOD-323 |
4 V 30 mA低镉肖特基势垒二极管 4 V, 30 mA low Cd Schottky barrier diode
|
||
1PS76SB17,115
|
NXP | 功能相似 | SOD-323 |
DIODE SCHOTTKY 4V 30mA SC76
|
||
1PS76SB17,115
|
Nexperia | 功能相似 | SOD-323 |
DIODE SCHOTTKY 4V 30mA SC76
|
||
|
|
NXP | 功能相似 |
SILICON, UHF BAND, MIXER DIODE
|
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