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Model 1N914BTR

Description 1N914B 系列 500 mW 100 V 最大反向电压 0.5 A 小信号二极管 - DO-35

Brand: ON Semiconductor

Packaging DO-204AH

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	2
Technical parameters/forward voltage:	1V @100mA
Technical parameters/dissipated power:	500 mW
Technical parameters/thermal resistance:	300℃/W (RθJA)
Technical parameters/reverse recovery time:	4 ns
Technical parameters/forward current:	200 mA
Technical parameters/Maximum forward surge current (Ifsm):	4 A
Technical parameters/forward voltage (Max):	1 V
Technical parameters/forward current (Max):	300 mA
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	500 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	2
Encapsulation parameters/Encapsulation:	DO-204AH
Dimensions/Length:	4.56 mm
Dimensions/Width:	1.91 mm
Dimensions/Height:	1.91 mm
Dimensions/Packaging:	DO-204AH
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2017/07/07

Alternative material

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1N914B	Freescale	类似代替		1N914B 系列 500 mW 100 V 0.5 A 通孔小信号二极管 - DO-35	PDF
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1N914B_T50R	ON Semiconductor	完全替代	DO-204AH	DIODE GEN PURP 100V 200mA DO35	PDF
1N914TR	Fairchild	功能相似	DO-35	ON Semiconductor 二极管 1N914TR, Io=300mA, Vrev=100V, 4ns, 2引脚 DO-35封装	PDF