Technical parameters/tolerances: | ±5 % |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 7.5 mA |
|
Technical parameters/voltage regulation value: | 6.2 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-7 |
|
Dimensions/Packaging: | DO-7 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N823
|
American Power Devices | 完全替代 | DO-204AA |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
Solid State | 完全替代 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|||
1N825A
|
American Power Devices | 完全替代 | DO-7 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
Central Semiconductor | 完全替代 | DO-35 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
NJS | 完全替代 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|||
1N825A
|
Microsemi | 完全替代 | DO-7 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
|
|
NJS | 完全替代 | 2 |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N829A
|
Central Semiconductor | 完全替代 | DO-35 |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
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