Technical parameters/forward voltage: | 1.1 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 600 V |
|
Technical parameters/forward current: | 1 A |
|
Technical parameters/maximum reverse leakage current (Ir): | 10 uA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | DO-213AB |
|
Dimensions/Packaging: | DO-213AB |
|
Other/Minimum Packaging: | 1500 |
|
Compliant with standards/RoHS standards: | Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6482-E3/96
|
VISHAY | 类似代替 | DO-213AB |
1A,超过 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
1N6482-E3/96
|
Vishay Semiconductor | 类似代替 | DO-213AB |
1A,超过 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
|
|
VISHAY | 类似代替 | DO-5 |
整流器 600 Volt 1.0 Amp 30 Amp IFSM
|
||
1N6482-E3/97
|
Vishay Semiconductor | 类似代替 | DO-213AB |
整流器 600 Volt 1.0 Amp 30 Amp IFSM
|
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