Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 20 mA |
|
Technical parameters/voltage regulation value: | 7.5 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35-2 |
|
Dimensions/Length: | 3.71 mm |
|
Dimensions/Packaging: | DO-35-2 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 类似代替 | 2 |
400MW硅齐纳二极管 SILICON 400MW ZENER DIODES
|
||
|
|
Microsemi | 类似代替 | DO-35-2 |
400MW硅齐纳二极管 SILICON 400MW ZENER DIODES
|
||
|
|
ON Semiconductor | 类似代替 | DO-204AH |
Diode Zener 7.5V 0.5W(1/2W) Do35
|
||
1N5997B
|
Fairchild | 类似代替 | DO-35-2 |
Diode Zener 7.5V 0.5W(1/2W) Do35
|
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