Technical parameters/rated voltage (DC): | 600 V |
|
Technical parameters/rated current: | 2.00 A |
|
Technical parameters/capacitance: | 10.0 pF |
|
Technical parameters/output current: | ≤2.00 A |
|
Technical parameters/forward voltage: | 1.4V @1.2A |
|
Technical parameters/polarity: | Standard |
|
Technical parameters/thermal resistance: | 38℃/W (RθJL) |
|
Technical parameters/reverse recovery time: | 45 ns |
|
Technical parameters/forward current: | 1200 mA |
|
Technical parameters/forward voltage (Max): | 1.4V @1.2A |
|
Technical parameters/forward current (Max): | 1200 mA |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | A-PAK |
|
Dimensions/Packaging: | A-PAK |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX1N6622
|
Sensitron Semiconductor | 功能相似 | 106 |
Diode Switching 660V 1.2A 2Pin Case A
|
||
JANTX1N6622
|
Microsemi | 功能相似 | A, Axial |
Diode Switching 660V 1.2A 2Pin Case A
|
||
JANTXV1N6622
|
Microsemi | 功能相似 | A, Axial |
Diode Switching 660V 1.2A 2Pin Case A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review