Technical parameters/forward voltage: | 1 V |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/forward current: | 400 mA |
|
Technical parameters/forward voltage (Max): | 1V @400mA |
|
Technical parameters/forward current (Max): | 0.4 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N645
|
Microsemi | 完全替代 | DO-35 |
硅整流二极管 Silicon Rectifier Diodes
|
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