Technical parameters/tolerances: | ±5 % |
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Technical parameters/forward voltage: | 1.1V @200mA |
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Technical parameters/voltage regulation value: | 3 V |
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Technical parameters/forward voltage (Max): | 1.1V @200mA |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-204AH |
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Dimensions/Packaging: | DO-204AH |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Motorola | 类似代替 | CASE 299 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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Leshan Radio | 类似代替 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
|||
|
|
TAK Cheong | 类似代替 | DO-204 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
1N4372A
|
Central Semiconductor | 类似代替 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
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|
|
Rectron Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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|
Philips | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
|||
1N5225B
|
NTE Electronics | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
ON Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Fairchild | 完全替代 | DO-204AH |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Motorola | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
|
1N5225B
|
先科ST | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B(DO-35)
|
Microsemi | 类似代替 | DO-204AH |
DIODE ZENER 3V 0.5W(1/2W) DO35
|
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