Technical parameters/dissipated power: | 3 W |
|
Technical parameters/test current: | 18.7 mA |
|
Technical parameters/voltage regulation value: | 20 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-41 |
|
Dimensions/Packaging: | DO-41 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | DO-204AL |
SILICON ZENER DIODES
|
||
|
|
Panjit | 完全替代 | DO-41 |
SILICON ZENER DIODES
|
||
|
|
ON Semiconductor | 完全替代 | Lead-2 |
SILICON ZENER DIODES
|
||
|
|
Sunmate | 完全替代 | DO-41 |
SILICON ZENER DIODES
|
||
|
|
Jinan Gude Electronic Device | 完全替代 |
SILICON ZENER DIODES
|
|||
1N5932B
|
Newark | 完全替代 |
SILICON ZENER DIODES
|
|||
1N5932B
|
Motorola | 完全替代 |
SILICON ZENER DIODES
|
|||
1N5932B
|
Transys Electronics | 完全替代 |
SILICON ZENER DIODES
|
|||
1N5932B
|
Micro Commercial Components | 完全替代 | DO-41 |
SILICON ZENER DIODES
|
||
BZX85C20
|
Fairchild | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR BZX85C20 单管二极管 齐纳, 20 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
||
BZX85C20
|
Taiwan Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX85C20 单管二极管 齐纳, 20 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
|||
BZX85C20
|
EIC | 功能相似 | DO-204AL |
FAIRCHILD SEMICONDUCTOR BZX85C20 单管二极管 齐纳, 20 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
||
BZX85C20
|
Electronics Industry | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX85C20 单管二极管 齐纳, 20 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
|||
BZX85C20-TAP
|
Vishay Semiconductor | 功能相似 | DO-41 |
1.3W,BZX85 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
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