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Model 1N5908G
Description 1500W Mosorb™ 齐纳瞬态电压抑制器(单向) Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率:1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B,用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器,On Semiconductor
Product QR code
Packaging DO-201AD
Delivery time
Packaging method Each
Standard packaging quantity 1
1.63  yuan 1.63yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5931) Minimum order quantity(1)
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Technical parameters/breakdown voltage:

6.00 V

 

Technical parameters/number of pins:

2

 

Technical parameters/clamp voltage:

8.5 V

 

Technical parameters/test current:

1 mA

 

Technical parameters/peak pulse power:

1500 W

 

Technical parameters/minimum reverse breakdown voltage:

6 V

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/operating temperature:

-65℃ ~ 175℃

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

DO-201AD

 

Dimensions/Length:

9.5 mm

 

Dimensions/Packaging:

DO-201AD

 

Physical parameters/operating temperature:

-65℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Last Time Buy

 

Other/Packaging Methods:

Each

 

Other/Manufacturing Applications:

Power Management, Communication and Networking, Consumer Electronics, Automation and Process Control, Communications& Networking,

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
1N5908RL4 1N5908RL4 ON Semiconductor 完全替代 DO-201AD
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1N5908RL4G 1N5908RL4G Z-TEK 类似代替
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