Technical parameters/capacitance: | 1050 pF |
|
Technical parameters/breakdown voltage: | 30.0 V |
|
Technical parameters/number of pins: | 2 |
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Technical parameters/forward voltage: | 3.5 V |
|
Technical parameters/dissipated power: | 1500 W |
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Technical parameters/clamp voltage: | 41.4 V |
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Technical parameters/test current: | 1 mA |
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Technical parameters/maximum reverse breakdown voltage: | 31.5 V |
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Technical parameters/peak pulse power: | 1500 W |
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Technical parameters/minimum reverse breakdown voltage: | 28.5 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-201AD |
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Dimensions/Packaging: | DO-201AD |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Manufacturing Applications: | Computers and computer peripherals, communication and networking, medical, general, power management, consumer electronics, automation and process control, industrial |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE30AG
|
Littelfuse | 功能相似 | DO-201-2 |
1N6267A 系列 31.5 V 1500 W 单向 齐纳 瞬态电压抑制器
|
||
1.5KE30AG
|
ON Semiconductor | 功能相似 | DO-201AD |
1N6267A 系列 31.5 V 1500 W 单向 齐纳 瞬态电压抑制器
|
||
1.5KE30ARL4G
|
ON Semiconductor | 功能相似 | 41A-04 |
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
|
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