Technical parameters/forward voltage: | 525mV @3A |
|
Technical parameters/forward current: | 3 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 80 A |
|
Technical parameters/forward voltage (Max): | 525 mV |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-201AD |
|
Dimensions/Length: | 9.5 mm |
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Dimensions/Width: | 5.3 mm |
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Dimensions/Height: | 5.3 mm |
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Dimensions/Packaging: | DO-201AD |
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Physical parameters/operating temperature: | -65℃ ~ 125℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5822-E3/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822-E3/54
|
General Semiconductor | 类似代替 | DO-201AD |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822-E3/54
|
General Instruments Consortium | 类似代替 |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
|||
1N5822G
|
ON Semiconductor | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5822G 肖特基整流器, 通用, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822G
|
Microsemi | 类似代替 | B |
ON SEMICONDUCTOR 1N5822G 肖特基整流器, 通用, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822RLG
|
ON Semiconductor | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5822RLG 肖特基整流二极管, 3A 40V DO-201AD
|
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