Technical parameters/tolerances: | ±1 % |
|
Technical parameters/forward voltage: | 900mV @10mA |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/voltage regulation value: | 11 V |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 完全替代 | 2 |
DO-35 11V 0.5W(1/2W)
|
||
|
|
Microsemi | 完全替代 | DO-35 |
DO-35 11V 0.5W(1/2W)
|
||
|
|
Microchip | 功能相似 | DO-35-2 |
Diode Zener 11V 0.5W(1/2W) Do35
|
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