Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/Encapsulation: | DO-204AH |
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Dimensions/Packaging: | DO-204AH |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Microchip | 类似代替 |
肖特基势垒二极管 SCHOTTKY BARRIER DIODES
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JAN1N5712-1
|
Microsemi | 功能相似 | DO-35 |
每肖特基二极管合格MIL -PRF-四百四十四分之一万九千五百 Schottky Barrier Diode Qualified per MIL-PRF-19500/444
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