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Model 1N5401-E3/54
Description DIODE GEN PURP 100V 3A DO201AD
Product QR code
Brand: General Semiconductor
Packaging DO-201AD
Delivery time
Packaging method
Standard packaging quantity 1
0.88  yuan 0.88yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1768) Minimum order quantity(1)
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Technical parameters/forward voltage:

1.2 V

 

Technical parameters/thermal resistance:

20℃/W (RθJA)

 

Technical parameters/forward current:

3 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-50 ℃

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

DO-201AD

 

Dimensions/Length:

9.5 mm

 

Dimensions/Packaging:

DO-201AD

 

Physical parameters/operating temperature:

50℃ ~ 150℃

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
1N5401-E3 1N5401-E3 Vishay Semiconductor 完全替代 DO-201AD
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
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ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
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ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
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1N5401G 1N5401G UTC 功能相似 DO-201AD
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1N5401G 1N5401G VISHAY 功能相似 DO-201AD
ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
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