Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.2V @1A |
|
Technical parameters/dissipated power: | 5 W |
|
Technical parameters/test current: | 75 mA |
|
Technical parameters/voltage regulation value: | 16 V |
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Technical parameters/forward voltage (Max): | 1.2V @1A |
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Technical parameters/rated power (Max): | 5 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | T-18-2 |
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Dimensions/Packaging: | T-18-2 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5353B
|
Microsemi | 类似代替 | T-18 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
|
EIC | 类似代替 | DO-15 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
|
Taitron | 类似代替 | Case 1.5KE |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
|
Transys Electronics | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
|
|
Central Semiconductor | 类似代替 | DO-35 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
|
Vishay Semiconductor | 类似代替 | CASE 7 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5353B
|
NTE Electronics | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
|
|
Galaxy Semi-Conductor | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
|
|
Motorola | 类似代替 | DO-201AE |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5353B
|
Panjit | 类似代替 | DO-201AE |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
1N5353B
|
Boca Semiconductor | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
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