Technical parameters/forward voltage: | 1.3 V |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/reverse recovery time: | 4 ns |
|
Technical parameters/forward current: | 200 mA |
|
Technical parameters/forward current (Max): | 0.2 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | DO-35 |
1N5282: 小信号二极管
|
||
1N5282TR
|
Fairchild | 功能相似 | DO-35 |
1N5282: 小信号二极管
|
||
1N5282_T50R
|
Fairchild | 功能相似 | DO-35 |
DIODE GEN PURP 80V 200mA DO35
|
||
1N5282_T50R
|
ON Semiconductor | 功能相似 | DO-204AH |
DIODE GEN PURP 80V 200mA DO35
|
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