Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/voltage regulation value: | 33 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Surge Components | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
|
|
Panjit | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
||
|
|
ETC | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
|
|
DC Components | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
|
|
Freescale | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
|
|
First Components International | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
|
|
先科ST | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
||
1N5257B
|
Rectron Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
||
1N5257B
|
Microchip | 完全替代 | DO-7 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
||
1N5257B
|
CHENG-YI | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
1N5257B
|
New Jersey Semiconductor | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
|
|||
1N5257B_T50R
|
Fairchild | 完全替代 | DO-35-2 |
稳压二极管 33V 0.5W Zener
|
||
1N973BTR
|
Fairchild | 完全替代 | DO-204AH |
Diode Zener Single 33V 5% 0.5W(1/2W) 2Pin DO-35 T/R
|
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