Technical parameters/rated voltage (DC): | 3.00 V |
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Technical parameters/tolerances: | ±5 % |
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Technical parameters/rated power: | 500 mW |
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Technical parameters/forward voltage: | 1.2V @200mA |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/voltage regulation value: | 3 V |
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Technical parameters/forward voltage (Max): | 1.2V @200mA |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rectron Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
|
|
Philips | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
|||
1N5225B
|
NTE Electronics | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
ON Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Fairchild | 完全替代 | DO-204AH |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Motorola | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
先科ST | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
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