Technical parameters/rated voltage (DC): | 2.70 V |
|
Technical parameters/tolerances: | ±5 % |
|
Technical parameters/rated power: | 500 mW |
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Technical parameters/forward voltage: | 1.1V @200mA |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/test current: | 20 mA |
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Technical parameters/voltage regulation value: | 2.7 V |
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Technical parameters/forward voltage (Max): | 1.1V @200mA |
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Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Length: | 4.2 mm |
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Dimensions/Width: | 2 mm |
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Dimensions/Height: | 2 mm |
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Dimensions/Packaging: | DO-35 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | PB free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5223B
|
Fairchild | 类似代替 | DO-35 |
硅Z-二极管 Silicon Z-Diodes
|
||
1N5223B
|
Motorola | 类似代替 | DO-35 |
硅Z-二极管 Silicon Z-Diodes
|
||
1N5223B
|
Microsemi | 类似代替 | DO-35-2 |
硅Z-二极管 Silicon Z-Diodes
|
||
1N5223B
|
Central Semiconductor | 类似代替 | DO-35 |
硅Z-二极管 Silicon Z-Diodes
|
||
1N5223B
|
NTE Electronics | 类似代替 |
硅Z-二极管 Silicon Z-Diodes
|
|||
1N5223B
|
Leshan Radio | 类似代替 |
硅Z-二极管 Silicon Z-Diodes
|
|||
1N5223B-A
|
Diodes | 类似代替 | DO-35 |
ZENER DIODE,DO-35,0.5W(1/2W),2.7V,ROHS,10K
|
||
1N5223B-T
|
Vishay Semiconductor | 类似代替 | DO-35 |
1N5223B Series 0.5W(1/2W) 2.7V 200mA Through Hole Epitaxial Zener Diode - DO-35
|
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