Technical parameters/tolerances: | ±5 % |
|
Technical parameters/voltage regulation value: | 9.1 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Physical parameters/operating temperature: | 0℃ ~ 75℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 完全替代 | 2 |
9.1 VOLT温度补偿齐纳二极管基准二极管 9.1 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N4771
|
New Jersey Semiconductor | 完全替代 |
9.1 VOLT温度补偿齐纳二极管基准二极管 9.1 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
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