Technical parameters/forward voltage: | 1V @100mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/thermal resistance: | 300℃/W (RθJA) |
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Technical parameters/forward current: | 200 mA |
|
Technical parameters/Maximum forward surge current (Ifsm): | 4 A |
|
Technical parameters/forward voltage (Max): | 1 V |
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Technical parameters/forward current (Max): | 200 mA |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/operating temperature: | 175℃ (Max) |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Height: | 4.56 mm |
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Dimensions/Packaging: | DO-35 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 |
二极管 小信号, 单, 200 V, 200 mA, 1 V, 4 A
|
|||
|
|
Microchip | 功能相似 | Bulk |
二极管 小信号, 单, 200 V, 200 mA, 1 V, 4 A
|
||
|
|
ETC1 | 功能相似 |
二极管 小信号, 单, 200 V, 200 mA, 1 V, 4 A
|
|||
1N485B
|
Fairchild | 功能相似 | DO-35 |
二极管 小信号, 单, 200 V, 200 mA, 1 V, 4 A
|
||
1N485B_T50R
|
ON Semiconductor | 类似代替 | DO-204AH |
DIODE GEN PURP 200V 200mA DO35
|
||
1N485B_T50R
|
Fairchild | 类似代替 | DO-35 |
DIODE GEN PURP 200V 200mA DO35
|
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