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Model 1N459TR
Description ON Semiconductor 二极管 1N459TR, Io=500mA, Vrev=200V, 2引脚 DO-35封装
Product QR code
Brand: ON Semiconductor
Packaging DO-35
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.25  yuan 0.25yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1342) Minimum order quantity(1)
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Technical parameters/forward voltage:

1V @100mA

 

Technical parameters/forward current:

500 mA

 

Technical parameters/Maximum forward surge current (Ifsm):

4 A

 

Technical parameters/forward voltage (Max):

1 V

 

Technical parameters/forward current (Max):

500 mA

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/operating temperature:

175℃ (Max)

 

Technical parameters/dissipated power (Max):

500 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

DO-35

 

Dimensions/Height:

4.56 mm

 

Dimensions/Packaging:

DO-35

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
1N459 1N459 ON Semiconductor 类似代替 DO-35
High Conductance Low Leakage Diode
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1N459 1N459 New Jersey Semiconductor 类似代替 2
High Conductance Low Leakage Diode
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1N459 1N459 Fairchild 类似代替 DO-35-2
High Conductance Low Leakage Diode
PDF
1N459ATR 1N459ATR Fairchild 类似代替 DO-35
ON Semiconductor 二极管 1N459ATR, Io=500mA, Vrev=200V, 2引脚 DO-35封装
PDF
1N459_T50R 1N459_T50R Fairchild 类似代替 DO-35
DIODE GEN PURP 200V 500mA DO35
PDF
1N459_T50R 1N459_T50R ON Semiconductor 类似代替 DO-204AH
DIODE GEN PURP 200V 500mA DO35
PDF

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