Technical parameters/rated voltage (DC): | 800 V |
|
Technical parameters/rated current: | 1.00 A |
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Technical parameters/capacitance: | 15.0 pF |
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Technical parameters/output current: | ≤1.00 A |
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Technical parameters/forward voltage: | 1.1 V |
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Technical parameters/polarity: | Standard |
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Technical parameters/forward current: | 1 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 30 A |
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Technical parameters/forward voltage (Max): | 1.35 V |
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Technical parameters/forward current (Max): | 1 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -50 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-41-2 |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 2.7 mm |
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Dimensions/Height: | 2.7 mm |
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Dimensions/Packaging: | DO-41-2 |
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Physical parameters/operating temperature: | -50℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4006 BK
|
Central Semiconductor | 功能相似 | DO-204AL |
DIODE GEN PURP 800V 1A DO41
|
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