Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/voltage regulation value: | 9.1 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX1N4103-1
|
Sensitron Semiconductor | 功能相似 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTX1N4103-1
|
Microchip | 功能相似 | DO-213AA-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTX1N4103-1
|
M/A-Com | 功能相似 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTX1N4103C-1
|
M/A-Com | 功能相似 | DO-35 |
Diode Zener 9.1V 0.5W(1/2W) Do35
|
||
JANTX1N4103C-1
|
Microchip | 功能相似 | DO-35-2 |
Diode Zener 9.1V 0.5W(1/2W) Do35
|
||
|
|
M/A-Com | 功能相似 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTXV1N4103-1
|
Microsemi | 功能相似 | DO-204AH |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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