Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
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Technical parameters/dissipated power: | 400 mW |
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Technical parameters/voltage regulation value: | 30 V |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4713(DO35)
|
Microsemi | 类似代替 | DO-35-2 |
齐纳稳压二极管 Zener Voltage Regulator Diode
|
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|
Jinan Gude Electronic Device | 完全替代 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
|
|||
|
|
Microsemi | 完全替代 | DO-35 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
|
||
|
|
New Jersey Semiconductor | 类似代替 | 2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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|
|
Microsemi | 类似代替 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
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