Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
|
Technical parameters/dissipated power: | 400 mW |
|
Technical parameters/test current: | 5 mA |
|
Technical parameters/voltage regulation value: | 20 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
M/A-Com | 功能相似 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
|
|||
1N5540B
|
Jinan Gude Electronic Device | 功能相似 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
|
|||
|
|
Microsemi | 功能相似 | DO-213AA-2 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
|
||
1N6007B
|
Fairchild | 完全替代 | DO-35-2 |
Diode Zener 20V 0.5W(1/2W) Do35
|
||
1N6007B
|
Microsemi | 完全替代 | DO-35 |
Diode Zener 20V 0.5W(1/2W) Do35
|
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