Technical parameters/forward current (Max): | 35 A |
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Technical parameters/operating temperature (Max): | 190 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-203AB |
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Dimensions/Packaging: | DO-203AB |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NJS | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
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1N1186A
|
International Rectifier | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
ETC2 | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
Diotec Semiconductor | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
Vishay Semiconductor | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
NTE5987
|
NTE Electronics | 功能相似 |
Diode 200V 40A 2Pin DO-5
|
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