Technical parameters/forward voltage: | 1.3 V |
|
Technical parameters/forward current: | 40000 mA |
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Technical parameters/forward current (Max): | 40 A |
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Technical parameters/operating temperature (Max): | 190 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-5 |
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Dimensions/Packaging: | DO-5 |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N1184AR
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
Rectifier Diode, 1 Phase, 1 Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1 PIN
|
||
1N1184AR
|
ETC2 | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1 PIN
|
|||
|
|
VISHAY | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
1N1184RA
|
Vishay Dale | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
|
|
Vishay Intertechnology | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
1N1184RA
|
International Rectifier | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
1N1184RA
|
Vishay Semiconductor | 功能相似 | DO-203AB |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
1N1184RA
|
Solid State | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
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