Technical parameters/capacitance: | 4.7 µF |
|
Technical parameters/tolerances: | ±20 % |
|
Technical parameters/rated voltage: | 50 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D475X0050D1V1E3
|
Vishay Sprague | 功能相似 | Through Hole |
CAP TANT 4.7uF 50V 20% RADIAL
|
||
199D475X0050D2B1E3
|
Vishay Semiconductor | 功能相似 | Through Hole |
Cap Tant Solid 4.7uF 50V 20% (6 X 10.16mm) Radial 2.54mm 125℃ T/R
|
||
199D475X0050D2B1E3
|
Vishay Sprague | 功能相似 |
Cap Tant Solid 4.7uF 50V 20% (6 X 10.16mm) Radial 2.54mm 125℃ T/R
|
|||
199D475X9050D1V1E3
|
Vishay Semiconductor | 功能相似 |
VISHAY 199D475X9050D1V1E3 钽电容, 4.7uF, 50V, 径向引线
|
|||
199D475X9050D1V1E3
|
Vishay Sprague | 功能相似 | Radial |
VISHAY 199D475X9050D1V1E3 钽电容, 4.7uF, 50V, 径向引线
|
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