Technical parameters/capacitance: | 33.0 µF |
|
Technical parameters/tolerances: | ±20 % |
|
Technical parameters/rated voltage: | 6.3 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D336X06R3C2B1E3
|
Vishay Semiconductor | 功能相似 | Through Hole |
CAP TANT 33uF 6.3V 20% RADIAL
|
||
199D336X96R3C1V1E3
|
Vishay Semiconductor | 功能相似 | Through Hole |
Cap Tant Solid 33uF 6.3V 10% (5.5 X 9.14mm) Radial 2.54mm 125℃ Bulk
|
||
199D336X96R3C1V1E3
|
VISHAY | 功能相似 | Radial |
Cap Tant Solid 33uF 6.3V 10% (5.5 X 9.14mm) Radial 2.54mm 125℃ Bulk
|
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