Technical parameters/capacitance: | 33 µF |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/Encapsulation: | Radial |
|
Dimensions/Height: | 10.16 mm |
|
Dimensions/Packaging: | Radial |
|
Physical parameters/medium materials: | Tantalum |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D336X0016D1V1E3
|
VISHAY | 功能相似 | Radial |
Cap Tant Solid 33uF 16V 20% (6 X 10.16mm) Radial 2.54mm 125℃ Bulk
|
||
199D336X0016D1V1E3
|
Vishay Semiconductor | 功能相似 |
Cap Tant Solid 33uF 16V 20% (6 X 10.16mm) Radial 2.54mm 125℃ Bulk
|
|||
199D336X9010D1V1E3
|
Vishay Semiconductor | 功能相似 |
VISHAY 199D336X9010D1V1E3 钽电容, 33uF, 10V, 径向引线
|
|||
199D336X9010D1V1E3
|
VISHAY | 功能相似 | Radial |
VISHAY 199D336X9010D1V1E3 钽电容, 33uF, 10V, 径向引线
|
||
199D336X9016D1V1E3
|
VISHAY | 功能相似 | Radial |
VISHAY 199D336X9016D1V1E3 钽电容, 33uF, 16V, 径向引线
|
||
199D336X9016D1V1E3
|
Vishay Semiconductor | 功能相似 |
VISHAY 199D336X9016D1V1E3 钽电容, 33uF, 16V, 径向引线
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review