Technical parameters/rated voltage (DC): | 35.0 V |
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Technical parameters/capacitance: | 2.2 µF |
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Technical parameters/tolerances: | ±10 % |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/rated voltage: | 35 V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Packaging parameters/pin spacing: | 2.54 mm |
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Dimensions/Height: | 7.62 mm |
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Dimensions/Pin Spacing: | 2.54 mm |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Packaging Methods: | Each |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D225X0035B1V1E3
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Vishay Semiconductor | 类似代替 | Through Hole |
VISHAY 199D225X0035B1V1E3 钽电容, 2.2uF, 35V, 径向引线
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VISHAY | 完全替代 | Radial |
199D 系列 2.2 uF ±10 % 35 V 径向 固体电解质钽电容
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