Technical parameters/rated voltage (DC): | 6.30 V |
|
Technical parameters/capacitance: | 10 µF |
|
Technical parameters/tolerances: | ±10 % |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/rated voltage: | 6.3 V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Packaging parameters/pin spacing: | 2.54 mm |
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Dimensions/Height: | 7.62 mm |
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Dimensions/Pin Spacing: | 2.54 mm |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D106X06R3B1V1E3
|
VISHAY | 类似代替 | Radial |
Cap Tant Solid 10uF 6.3V 20% (5 X 7.62mm) Radial 2.54mm 125℃ Bulk
|
||
199D106X9010B1V1E3
|
Vishay Sprague | 功能相似 | 0.2 in |
199D 系列 10 uF ±10 % 10 V 径向 固体电解质钽电容
|
||
199D106X9010B1V1E3
|
Vishay Semiconductor | 功能相似 | Radial |
199D 系列 10 uF ±10 % 10 V 径向 固体电解质钽电容
|
||
199D106X9010B1V1E3
|
VISHAY | 功能相似 | Radial |
199D 系列 10 uF ±10 % 10 V 径向 固体电解质钽电容
|
||
199D106X96R3B1V1E3
|
Vishay Semiconductor | 完全替代 | Through Hole |
VISHAY 199D106X96R3B1V1E3 钽电容, 10uF, 6.3V, 径向引线
|
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