Technical parameters/frequency: | 120 MHz |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/gain bandwidth product: | 120 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 140 |
|
Technical parameters/maximum current amplification factor (hFE): | 280 |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/DC current gain (hFE): | 140 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-243 |
|
Dimensions/Length: | 4.5 mm |
|
Dimensions/Width: | 2.5 mm |
|
Dimensions/Height: | 1.5 mm |
|
Dimensions/Packaging: | TO-243 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1416S-TD-E
|
ON Semiconductor | 功能相似 | TO-243 |
Small Signal Bipolar Transistor
|
||
2SA1416T-TD-E
|
Renesas Electronics | 功能相似 | PCP-3 |
NPN 晶体管,最大 1A,ON Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review