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Model SI1317DL-T1-GE3
Description VISHAY SI1317DL-T1-GE3 晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-323-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.79  yuan 0.79yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8031) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.125 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/threshold voltage:

450 mV

 

Technical parameters/rise time:

20 ns

 

Technical parameters/descent time:

9 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-50 ℃

 

Technical parameters/dissipated power (Max):

0.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-323-3

 

Dimensions/Length:

2.2 mm

 

Dimensions/Width:

1.35 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

SOT-323-3

 

Physical parameters/operating temperature:

-50℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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