Technical parameters/frequency: | 30 MHz |
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Technical parameters/rated voltage (DC): | -200 V |
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Technical parameters/rated current: | -15.0 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP, P-Channel |
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Technical parameters/dissipated power: | 200 W |
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Technical parameters/breakdown voltage (collector emitter): | 260 V |
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Technical parameters/Maximum allowable collector current: | 15A |
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Technical parameters/minimum current amplification factor (hFE): | 75 @5A, 5V |
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Technical parameters/maximum current amplification factor (hFE): | 150 |
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Technical parameters/rated power (Max): | 200 W |
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Technical parameters/DC current gain (hFE): | 175 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 200 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-264-3 |
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Dimensions/Length: | 20.3 mm |
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Dimensions/Width: | 5.3 mm |
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Dimensions/Height: | 29 mm |
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Dimensions/Packaging: | TO-264-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Audio, Consumer electronics, audio, Consumer Electronics, Professional audio amplifiers, High-fidelity consumer audio products |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJL0302AG
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ON Semiconductor | 类似代替 | TO-264-3 |
互补NPN - PNP功率双极晶体管 Complementary NPN-PNP Power Bipolar Transistors
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||
MJL1302A
|
ON Semiconductor | 类似代替 | TO-264-3 |
15安培互补硅功率晶体管260 VOLTS 200瓦 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
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