Technical parameters/frequency: | 2000 MHz |
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Technical parameters/rated voltage (DC): | 12.0 V |
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Technical parameters/rated current: | 50.0 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 225 mW |
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Technical parameters/breakdown voltage (collector emitter): | 12 V |
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Technical parameters/gain: | 15 dB |
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Technical parameters/minimum current amplification factor (hFE): | 25 @3mA, 1V |
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Technical parameters/maximum current amplification factor (hFE): | 250 |
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Technical parameters/rated power (Max): | 225 mW |
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Technical parameters/DC current gain (hFE): | 25 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 225 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.92 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.93 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFR182
|
Infineon | 功能相似 | SOT-23 |
NPN硅晶体管RF NPN Silicon RF Transistor
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MMBT5179
|
Fairchild | 类似代替 | SOT-23-3 |
晶体管 双极-射频, NPN, 12 V, 2 GHz, 225 mW, 50 mA, 25 hFE
|
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