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Model 2SB1188T100Q
Description ROHM 2SB1188T100Q 单晶体管 双极, PNP, -32 V, 100 MHz, 500 mW, -2 A, 82 hFE
Product QR code
Brand: ROHM Semiconductor
Packaging SOT-89
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.53  yuan 0.53yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4020) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-32.0 V

 

Technical parameters/rated current:

-2.00 A

 

Technical parameters/rated power:

2 W

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/breakdown voltage (collector emitter):

32 V

 

Technical parameters/Maximum allowable collector current:

2A

 

Technical parameters/minimum current amplification factor (hFE):

120 @500mA, 3V

 

Technical parameters/maximum current amplification factor (hFE):

390

 

Technical parameters/rated power (Max):

2 W

 

Technical parameters/DC current gain (hFE):

82

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-89

 

Dimensions/Length:

4.50 mm

 

Dimensions/Width:

2.5 mm

 

Dimensions/Height:

1.50 mm

 

Dimensions/Packaging:

SOT-89

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Not For New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial, Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:<

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