Technical parameters/forward voltage: | 1.3V @126A |
|
Technical parameters/thermal resistance: | 1.1℃/W (RθJC) |
|
Technical parameters/forward current: | 40 A |
|
Technical parameters/forward voltage (Max): | 1.3 V |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/working junction temperature (Max): | 200 ℃ |
|
Encapsulation parameters/installation method: | Chassis |
|
Encapsulation parameters/Encapsulation: | DO-203AB |
|
Dimensions/Length: | 20.02 mm |
|
Dimensions/Width: | 17.35 mm |
|
Dimensions/Height: | 22.9 mm |
|
Dimensions/Packaging: | DO-203AB |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | DO-5 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
||
1N1183A
|
Solid State | 功能相似 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
|||
1N1183A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
||
|
|
International Semiconductor | 功能相似 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
|||
1N1183A
|
International Rectifier | 功能相似 | DO-5 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
||
1N1183A
|
Vishay Semiconductor | 功能相似 | DO-203AB |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
||
1N1183A
|
NJS | 功能相似 |
SOLID STATE 1N1183A 硅整流二极管, DO5, 35A
|
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