Technical parameters/drain source resistance: | 540 mΩ |
|
Technical parameters/dissipated power: | 2W (Ta), 3.1W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 250pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/dissipated power (Max): | 2W (Ta), 3.1W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLL110
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 1.5A SOT223
|
|||
IRLL110
|
Vishay Intertechnology | 完全替代 | SOT-223-3 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110PBF
|
Vishay Semiconductor | 类似代替 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110PBF
|
VISHAY | 类似代替 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110PBF
|
Vishay Precision Group | 类似代替 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110PBF
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
|
|
Vishay Intertechnology | 完全替代 |
MOSFET N-CH 100V 1.5A SOT223
|
|||
IRLL110TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRLL110TR
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
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