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Model IXFH110N10P
Description IXYS SEMICONDUCTOR IXFH110N10P 晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V
Product QR code
Brand: IXYS Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
39.4  yuan 39.4yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8998) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.015 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

480 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/Continuous drain current (Ids):

110 A

 

Technical parameters/rise time:

25 ns

 

Technical parameters/Input capacitance (Ciss):

3550pF @25V(Vds)

 

Technical parameters/rated power (Max):

480 W

 

Technical parameters/descent time:

25 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

480W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

16.26 mm

 

Dimensions/Width:

5.3 mm

 

Dimensions/Height:

21.46 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with th

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STW120NF10 STW120NF10 ST Microelectronics 功能相似 TO-247-3
STMICROELECTRONICS STW120NF10 晶体管, MOSFET, N沟道, 60 A, 100 V, 9 mohm, 10 V, 4 V

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