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Model VP0109N3-G

Description VP0109N3-G 袋装

Brand: Microchip

Packaging TO-92-3

Delivery time

Packaging method Bag

Standard packaging quantity 1

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Technical parameters/rated power:	1 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	6 Ω
Technical parameters/polarity:	P-CH
Technical parameters/dissipated power:	1 W
Technical parameters/drain source voltage (Vds):	90 V
Technical parameters/Continuous drain current (Ids):	0.25A
Technical parameters/rise time:	3 ns
Technical parameters/Input capacitance (Ciss):	60 pF
Technical parameters/descent time:	4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-92-3
Dimensions/Length:	5.21 mm
Dimensions/Width:	4.19 mm
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-92-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Bag
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free
Customs information/ECCN code:	EAR99

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Model	Brand	Similarity	Introduction	Data manual
109N	Microchip	功能相似	250mA, 90V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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VP0109N3	Suptertex	完全替代	Trans MOSFET P-CH 90V 0.25A 3Pin TO-92
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VP0109ND	Microchip	功能相似	P-CH 60V 0.25A	PDF